Dresden 2014 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 37: Posters: Plasmonics, Electronic Structure and Spin-Orbit Interaction, Semiconductor and Insulator Surfaces, Nanostructures

O 37.51: Poster

Dienstag, 1. April 2014, 18:30–22:00, P2

Growth of epitaxial Bismuth films on vicinal Si(111) — •Monika Jäger¹, Christian Brand¹, Daniel Lükermann¹, Saddam Banyoudeh¹, Sergeii Sologub², Christoph Tegenkamp¹, and Herbert Pfnür¹ — ¹Institut für Festkörperphysik, Leibniz Universität Hannover, Germany — ²Institute of Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine

Vicinal semi-metallic Bi-films are expected to reveal topologically protected edge states. In this study the growth of Bi-multilayer structures on Si(557) substrates has been investigated by LEED and STM. Thereby, wetting layer structures formed prior to the film deposition on Si(557) surfaces turned out to be crucial for epitaxial growth. Only in the presence of Bi-wetting layers well-ordered films can be grown. Depending on coverage of the Bi-wetting layers either stepped Bi(111) or Bi(110) have been found. In addition, Bi(221) surfaces have been obtained only on Bi-wetting layers formed by less than a monolayer. The formation of Si(335)-facets during formation of the wetting layers turns out to be essential for the growth of the these structures.