Dresden 2014 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 37: Posters: Plasmonics, Electronic Structure and Spin-Orbit Interaction, Semiconductor and Insulator Surfaces, Nanostructures
O 37.58: Poster
Dienstag, 1. April 2014, 18:30–22:00, P2
Structure and manipulation of h-BN on Ir(111) — •Domenik M. Zimmermann, Ulrike A. Schröder, and Thomas Michely — II. Physikalisches Institut, Zülpicher Str. 77, Universität zu Köln
The formation of high quality hexagonal, 2D boron nitride (h-BN) through thermal decomposition of borazine(B3N3H6) on Ir(111) is investigated by scanning tunneling microscopy (STM).
As growth methods chemical vapor deposition (CVD) and temperature programmed growth (TPG, room temperature adsorption followed by annealing) are applied in the temperature range from 1000 K to 1400 K. In contrast to graphene, the morphology depends strikingly on the growth method applied, resulting in nearly perfect, large h-BN flakes (CVD) or percolation networks with nanoscale holes (TPG).
Unlike graphene, h-BN consists of two distinct sublattices, made up of B and N atoms, respectivly. Exchanging B and N atoms results in two different domains, that are observed with STM. We investigate the preferred domain orientation depending on growth temperature and growth method.
The monolayer is further treated in the electric field of the STM tip. Periodic, 2-dimensional defect structures are achieved by tip-induced manipulation. A threshold bias voltage for this nanomesh creation is obtained and the manipulation probability is investigated as a function of tunneling parameters.