Dresden 2014 – scientific programme
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O: Fachverband Oberflächenphysik
O 37: Posters: Plasmonics, Electronic Structure and Spin-Orbit Interaction, Semiconductor and Insulator Surfaces, Nanostructures
O 37.61: Poster
Tuesday, April 1, 2014, 18:30–22:00, P2
XPD structure determination of HfSi2 islands grown on Si(110) surfaces — •Frank Schönbohm1,2, Tobias Lühr1, Dominique Handschak1,2, Philipp Espeter1,2, Christoph Keutner1,2, Ulf Berges1,2, and Carsten Westphal1,2 — 1Fakultät Physik - Technische Universität Dortmund, Otto-Hahn-Str. 4, D 44221 Dortmund, Germany — 2DELTA - Technische Universität Dortmund, Maria-Goeppert-Mayer-Str. 2, D 44227 Dortmund, Germany
Perspective replacement candidates of the SiO2 gate dielectrics in MOSFETs are the so-called high-k materials like HfO2. The thermal stability of thin HfO2 films on Si(110) surfaces plays an important role during the production process and was studied by means of x-ray photoelectron spectroscopy (XPS) and photoelectron diffraction (XPD). The sample was stepwise annealed within the temperature range from 500∘C up to 770∘C. XPS spectra of the Si 2p, Hf 4f, and O 2s signal were recorded as a function of the annealing temperature. The measurements indicate a stable HfO2-film for temperatures up to 730∘C. Further annealing at temperatures up to 770∘C removed the oxygen completely from the sample and the remaining Hf was bound to the substrate forming HfSi2. SEM investigations of the surface showed that the HfSi2 is arranged in islands at the surface. An XPD pattern of the Hf 4f signal was recorded in order to investigate the internal atomic structure of the HfSi2 islands. The experimental diffraction pattern was compared to simulated pattern resulting in a structure model for the HfSi2 islands.