Dresden 2014 – scientific programme
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O: Fachverband Oberflächenphysik
O 37: Posters: Plasmonics, Electronic Structure and Spin-Orbit Interaction, Semiconductor and Insulator Surfaces, Nanostructures
O 37.65: Poster
Tuesday, April 1, 2014, 18:30–22:00, P2
Surface investigation of ceria films on Si(111) after post deposition annealing — •Robert Oelke1, Wanja Spiess1, Henrik Wilkens1, Marvin H. Zoellner2, Gang Niu2, Thomas Schroeder2,3, and Joachim Wollschläger1 — 1Fachbereich Physik, Universität Osnabrück, Barbarastr. 7, 49069 Osnabrück, Germany — 2IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 3BTU Cottbus, Institute of Physics, Konrad-Zuse-Str.1, 03046 Cottbus, Germany
CeO2(111) films are a promising candidates in the field of microelectronics due to their high dielectric constant and the very small lattice mismatch in respect to Si(111). Furthermore, CeO2 films can be used as model systems to study its catalytic properties. The generation of oxygen vacancies is of particular interest since they have a strong influence on the catalytic, as well as, the electronic properties.
Therefore, we present a post deposition annealing study of several CeO2(111) films grown on hex-Pr2O3/Si(111) system. Films with thicknesses in the range of 8 to 250 nm are annealed under UHV conditions. After each annealing step low energy electron diffraction measurements combined with spot profile analysis (SPA-LEED) are performed.
Several superstructures are formed at elevated temperatures indicating a periodic order of oxygen vacancies during reduction. Spot profile analysis show that the crystalline quality increases with higher film thickness.