Dresden 2014 – scientific programme

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O: Fachverband Oberflächenphysik

O 37: Posters: Plasmonics, Electronic Structure and Spin-Orbit Interaction, Semiconductor and Insulator Surfaces, Nanostructures

O 37.66: Poster

Tuesday, April 1, 2014, 18:30–22:00, P2

Constructive electromigration of indium on silicon(111) — •Paul Graf, Alexander M. Bernhart, Mark R. Kaspers, Christan A. Bobisch, and Rolf Möller — Faculty of Physics, Center for Nanointegration Duisburg-Essen, University of Duisburg-Essen, 47048 Duisburg, Germany

Electromigration (EM) is the material transport driven by an electron current or by an electric field [1]. This process is technically very important for thin/small conductors in electronic devices (e.g. CPUs) since the dimension of such structures reach the range of 10 nm or less. Here, we investigate in situ the EM of Indium on a Si(111) surface using a four probe scanning tunneling microscope (STM) and a scanning electron microscope (SEM). We study the indium induced surface reconstruction on Si(111) [2] with µ m-scaled indium islands. To apply an electric field in parallel to the surface two tips make contact to islands. Using the SEM we observe the formation of additional In islands in between the contacted islands, which results from the material transport from the indium reconstruction. In contrast to the usual destructive EM, we use this transport to form Indium wires; the method may become a starting point for the directed growth of small electronic networks.

[1] R. Landauer and W. Woo, Phys. Rev. B 10, p. 1266 (1974).

[2] Eli Rotenberg et al., Phys. Rev. Lett. 91, 246404 (2003).