Dresden 2014 – scientific programme
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O: Fachverband Oberflächenphysik
O 37: Posters: Plasmonics, Electronic Structure and Spin-Orbit Interaction, Semiconductor and Insulator Surfaces, Nanostructures
O 37.67: Poster
Tuesday, April 1, 2014, 18:30–22:00, P2
In situ control of step formation on Si(100) in process gas ambient — •Sebastian Brückner1,2, Oliver Supplie1,2, Peter Kleinschmidt2,3, Henning Döscher2, Anja Dobrich2, and Thomas Hannappel1,2,3 — 1Helmholtz-Zentrum Berlin, Institut Solare Brennstoffe und Energiespeichermaterialien, D-14109 Berlin — 2TU Ilmenau, Institut für Physik, Fachgebiet Photovoltaik, D-98693 Ilmenau — 3CiS Forschungsinstitut für Mikrosensorik und Photovoltaik, D-99099 Erfurt
Double-layer step formation on Si(100) substrates is a crucial prerequisite for antiphase-domain free III-V heteroeptitaxy. Si(100) preparation in hydrogen process gas ambient, which is commonly employed for Si and III-V device preparation, differs strongly from preparation in ultra-high vacuum due to strong interaction between H2 and the Si surface. In situ surface characterization by reflection anisotropy spectroscopy allowed us to study and control the domain formation of Si(100) surfaces directly in dependence on process parameters during MOVPE preparation. Here, we show that energetically and kinetically driven step formation on Si(100) compete depending on MOVPE process conditions. While preparation of vicinal substrates at low H2 pressure leads to predominant (2×1) surface reconstruction with DB steps (i.e. dimer rows perpendicular to step edges), preparation at high H2 pressure resulted in a predominant (1×2) reconstructed surface with DA steps (dimer rows parallel to step edges). On nearly exact Si(100), Si monolayer removal in H2 ambient results in an oscillating A- and B-type majority domain formation.