Dresden 2014 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
O: Fachverband Oberflächenphysik
O 37: Posters: Plasmonics, Electronic Structure and Spin-Orbit Interaction, Semiconductor and Insulator Surfaces, Nanostructures
O 37.97: Poster
Tuesday, April 1, 2014, 18:30–22:00, P2
Unusual resistance-voltage dependence of ultra-high vacuum-electromigrated nanojunctions — Dominik Stöffler1, •Michael Marz1, Birgit Kießig2, Tihomir Tomanic1, Hilbert v. Löhneysen1,2, and Regina Hoffmann-Vogel1 — 1Karlsruher Institut für Technologie, Physikalisches Institut und DFG-Center for Functional Nanostructures, D-76131 Karlsruhe Karlsruhe — 2Karlsruher Institut für Technologie, Institut für Festkörperphysik, D-76021 Karlsruhe
Clean and well-defined electronic contacts in the nanometer-size range are one prerequisite for single-molecule-based electronics. Controlled electromigration (EM) [1], especially in ultra high vacuum (UHV), allows the preparation of sufficiently small and clean metallic contacts. Here we present measurements of the voltage dependance of the electrical resistance R(V) subjected to EM in UHV. For large R values an unexpected decrease of R(V) with increasing bias is observed. Comparing with simple model calculations, we tentatively ascribe this behavior to tunneling in parallel to ohmic nanocontacs. In addition, we observe field emission, which additionally supports the idea that tunneling occurs in EM experiments performed in UHV.
D. R. Strachan et al., Appl. Phys. Lett. 86, 043109 (2005).