Dresden 2014 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 41: Graphene: Transport (HL jointly with MA, O, TT)
O 41.10: Vortrag
Mittwoch, 2. April 2014, 12:00–12:15, POT 051
Anisotropic photoinduced current injection in graphene — •Julien Rioux1, John Sipe2, and Guido Burkard1 — 1University of Konstanz — 2University of Toronto
Quantum-mechanical interference effects are considered in carrier and charge current excitation in gapless semiconductors using coherent optical field components at frequencies ω and 2ω. Due to the absence of a bandgap, excitation scenarios outside of the typical operation regime are considered; we calculate the polarization and spectral dependence of these all-optical effects for single- and bilayer graphene. For linearly-polarized light and with one-photon absorption at ω interfering with 2ω absorption and ω emission, the resulting current injection is five times stronger for perpendicular polarization axes compared to parallel polarization axes. This additional process results in an anisotropic current as a function of the angle between polarization axes, in stark contrast with the isotropic current resulting from the typical interference term in graphene [Rioux et al., PRB 83, 195406 (2011)]. Varying the Fermi level allows to tune the disparity parameter d=ηIxyyx/ηIxxxx closer to typical values in GaAs [|d|≈0.2, Rioux and Sipe, Physica E 45, 1 (2012)]: from −1, when the additional process is fully Pauli-blocked, to −3/7, when it is fully accessible, thus facilitating polarization sensitive applications.