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O: Fachverband Oberflächenphysik

O 63: Posters: Scanning Probe Methods

O 63.4: Poster

Mittwoch, 2. April 2014, 17:30–21:00, P2

Tunneling anisotropic magnetoresistance at the single atom limit — •Johannes Schöneberg¹, Nicolas Néel², Silke Schröder³, Paolo Ferriani³, Jörg Kröger², Richard Berndt¹, and Stefan Heinze³ — ¹IEAP der Christian-Albrechts-Universität zu Kiel, D-24098 Kiel, Germany — ²Institut für Physik, Technische Universität Ilmenau, D-98693 Ilmenau, Germany — ³ITAP der Christian-Albrechts-Universität zu Kiel, D-24098 Kiel, Germany

The spin orbit coupling (SOC) links the magnetic moment of electrons to the crystal lattice. In a scanning tunneling microscope, this enables the study of magnetic characteristics without the need for spin polarized tips. A prominent example is the second monolayer Fe/W(110) where nonmagnetic tips served to observe the domain walls at low bias in maps of the differential conductance. The observed contrast is due to different mixing of the states dominating the tunneling current caused by the changing orientation of the spin quantization axis. We use this surface to examine the SOC induced change in the differential conductance at the single atom limit. To this end atoms adsorbed on domains as well as domain walls are investigated. The different magnetic environments lead to variations in the conductance. This difference is quantified by means of the tunneling anisotropic magnetoresistance (TAMR).