Dresden 2014 – scientific programme

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O: Fachverband Oberflächenphysik

O 65: Poster: Graphene (HL jointly with MA, O)

O 65.6: Poster

Wednesday, April 2, 2014, 17:00–20:00, P1

Growth of graphene on 6H-SiC(0001) under ammonia/argon atmosphere — •Christian Raidel, Felix Fromm, Samir Mammadov, Martina Wanke, and Thomas Seyller — TU Chemnitz, Insitut für Physik, Germany

In this work we investigated the nitrogen incorporation into epitaxial grown monolayer graphene by using ammonia as process gas within argon flow during thermal decomposition of SiC. The growth parameters as temperature and ammonia concentration were studied by various surface sensitive methods as XPS, LEED, RAMAN, AFM, and STM. ARPES shows that the ammonia grown graphene shows more p-type doped graphene than undoped graphene on SiC(0001). Due to the dissociation of ammonia during the growth process etch pits are produced. Vacancy associated nitrogen incorporation was observed by XPS and STM.