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O: Fachverband Oberflächenphysik

O 78: Graphene: Spintronics, Transistors, and Sensors (HL jointly with DY, MA, O, TT)

O 78.11: Vortrag

Donnerstag, 3. April 2014, 17:45–18:00, POT 081

Graphene solution-gated field effect transistors on flexible substrates — •Andrea Bonaccini Calia, Benno M. Blaschke, Lucas H. Hess, Max Seifert, and Jose A. Garrido — Walter Schottky Institut, Technische Universität München, Germany

Graphene based solution-gated field effect transistors (SGFETs) hold great promise for biosensors and bioelectronic applications. Due to its unique combination of electronic, mechanical, and chemical properties, such as high charge carrier mobility, flexibility and good biocompatibility, graphene has been shown to be an excellent material for sensing in electrolyte environments. Sensors based on graphene SGFETs have already been realized on rigid substrates for various analytes, as well as for the detection of cell signals. However, this technology hold some severe problems for biomedical and in vivo applications. One of the major problems is the rigidity of the substrate itself, which does not allow a proper mechanical matching to the biological tissue, resulting in the formation of scar tissue. Therefore, flexible devices are currently considered as a major step towards the development of more biocompatible implants. In this work, an array of graphene SGFETs is fabricated on a flexible polymer substrate. We present a detailed electrical characterization of the flexible graphene SGFETs in electrolyte and compare their performance to graphene SGFETs on rigid substrates. In addition, we analyze the effect of changes in the electrolyte's pH and ionic strength on the transistor performance and present a model to explain the obtained results. Furthermore, the low-frequency noise performance of graphene devices on flexible substrates is discussed.