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O: Fachverband Oberflächenphysik

O 78: Graphene: Spintronics, Transistors, and Sensors (HL jointly with DY, MA, O, TT)

O 78.5: Vortrag

Donnerstag, 3. April 2014, 16:00–16:15, POT 081

Novel fabrication method of lateral spin valve devices based on graphene on hexagonal boron nitride — Marc Drögeler¹, Frank Volmer¹, •Maik Wolter¹, Bernat Terrés¹, Kenji Watanabe³, Takashi Taniguchi³, Gernot Güntherodt¹, Christoph Stampfer^1,2, and Bernd Beschoten¹ — ¹2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany, EU — ²Peter Grünberg Institute (PGI-8/9), Forschungszentrum Jülich, 52425 Jülich, Germany, EU — ³National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

Despite tremendous efforts in improving graphene-based spin transport devices the measured spin lifetimes are still orders of magnitude less than theoretically predicted. Contact-induced spin dephasing has recently been identified as the bottleneck for spin transport through Co/MgO spin injection and detection electrodes. It can, however, significantly be suppressed for devices with large contact resistance area products [1]. Simultaneously, a strong reduction of the charge carrier mobility is usually observed. We present a new method to fabricate graphene-based non-local spin valves on hexagonal boron nitride yielding spin lifetimes above 3 ns, spin diffusion length above 10 µm and large charge carrier mobilities above 30.000 cm²/Vs.

[1] F. Volmer et al., Phys. Rev. B 88, 161405(R) (2013).

This work has been supported by DFG through FOR 912 and by

EU through Graphene Flagship.