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O: Fachverband Oberflächenphysik

O 80: Surface Dynamics I

O 80.1: Vortrag

Donnerstag, 3. April 2014, 16:00–16:15, GER 38

High Remanent Spin Injection into GaAs(110): Strong Electron Energy Dependence with Steep Fall-Off — •Svenja Mühlenberend, Markus Gruyters, and Richard Berndt — Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, Germany

The spin polarization of electrons injected into GaAs from a magnetic tip of a scanning tunneling microscope is determined from the polarization of the induced electroluminescence. At low temperatures, unexpectedly high polarization values are observed. Moreover, the polarization exhibits a drastic electron energy dependence. Electron transport occurs at remanence, i.e. no external magnetic field is necessary to obtain a high spin injection efficiency.