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O: Fachverband Oberflächenphysik

O 80: Surface Dynamics I

O 80.9: Vortrag

Donnerstag, 3. April 2014, 18:00–18:15, GER 38

How far-from-equilibrium dynamics drive the ultrafast melting of a charge-density wave in TiSe₂ — •S. Eich¹, J. Urbancic¹, A. V. Carr², A. Stange³, T. Popmintchev², T. Rohwer³, M. Wiesenmayer¹, A. Ruffing¹, S. Jakobs¹, S. Hellmann³, P. Matyba², C. Chen², L. Kipp³, M. Bauer³, M. M. Murnane², K. Rossnagel³, H. C. Kapteyn², S. Mathias^1,2, and M. Aeschlimann¹ — ¹TU Kaiserslautern and Research Center OPTIMAS, Germany — ²JILA, Boulder, Co, USA — ³IEAP, Kiel, Germany

We present fs XUV ARPES with sub 150 meV energy- and sub 30 fs time-resolution of the prototypical semiconductor-to-metal photo-induced phase transition in the charge-density wave compound 1T-TiSe₂ [1]. We elucidate the role of far-from-equilibrium dynamics in the ultrafast melting of the charge-density wave in TiSe₂, and show that photo-induced transient non-equilibrium states are indispensible for the ultrafast response of the system. We find that hot carrier multiplication, which is only present during the first  200 fs, is the main driver of the ultrafast phase transition.

Rohwer et al., Nature 471,490 (2011)