Dresden 2014 – scientific programme

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O: Fachverband Oberflächenphysik

O 83: Graphene: Adsorption, Intercalation, Doping (O jointly with DS, HL, MA, TT)

O 83.10: Talk

Thursday, April 3, 2014, 18:15–18:30, WIL C107

Progressive nitrogen-doping of graphene on SiC(0001) — •Mykola Telychko, Pingo Mutombo, Martin Ondráček, Prokop Hapala, Jan Berger, Pavel Jelinek, and Martin Švec — Institute of Physics ASCR, Cukrovarnická 10, Praha, Czech republic

Doping of epitaxial graphene on SiC substrates was achieved by direct nitrogen ion implantation and stabilization at temperatures above 1300K. Scanning tunneling microscopy reveals very well-defined single substitutional defects on single and bilayer graphene. Repeated nitrogen implantation and stabilization leads to formation of double defects, which comprise of two nitrogen defects in a second-nearest-neighbour (meta) configuration. DFT calculations and scanning tunneling microscopy simulations are used to evaluate the electronic properties and to explain varying contrast of these defects in the atomically-resolved images, depending on the probe type. A mechanism of defect formation is proposed.