Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 88: Poster: Spintronics (HL jointly with MA, O)

O 88.5: Poster

Donnerstag, 3. April 2014, 17:00–20:00, P1

Electron spin control in Manganese doped GaAs/AlAs nanostructures — •Markus Kuhnert¹, Ilya A. Akimov¹, Vladimir L. Korenev², and Manfred Bayer¹ — ¹Experimentelle Physik 2, Technische Universität Dortmund, 44221 Dortmund, Germany — ²2A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia

The field of spintronics, which in contrast to electronics, uses the spin instead of charge as information carrier, presents many interesting possibilities. For proper implementation of spintronic devices, research of adequate materials and methods is required. Here we present the results of our research into Manganese doped GaAs/AlAs quantum wells, which might offer long lived spin coherence as well as spin manipulation mediated by the magnetic Manganese ions. We use pump-probe Kerr effect measurement techniques and time resolved photoluminescence measurements to investigate properties such as spin coherence and spin lifetime of the Mn doped nanostructures. The temperatures at the time of measurement range from 2K to 8K. Further studies are done on optically induced EPR of the Mn ions by applying a microwave modulation to the excitation laser beam. Exchange interaction between the Manganese ions and electrons in the quantum well might function as a channel for spin manipulation or conservation.