Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

TT: Fachverband Tiefe Temperaturen

TT 100: Graphene: Adsorption, Intercalation, Doping (organized by O)

TT 100.5: Vortrag

Donnerstag, 3. April 2014, 17:00–17:15, WIL C107

Deuterium adsorption on (and desorption from) SiC(0001)-(3x3), (R3xR3)R30°, (6R3x6R3)R30° and quasi-free-standing graphene obtained by hydrogen intercalation — •Bocquet F.C.¹, Bisson R.², Themlin J.-M.³, Layet J.-M.², and Angot T.² — ¹Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich - 52425 Jülich, Germany — ²Aix-Marseille Université, PIIM, CNRS, UMR 7345, 13013 Marseille, France — ³Aix-Marseille Université, IM2NP, 13397, Marseille, France and CNRS, UMR 7334, 13397, Marseille - Toulon, France

I present a comparative High-Resolution Electron Energy-Loss Spectroscopy (HREELS) study on the interaction of atomic hydrogen and deuterium with various reconstructions of SiC(0001). We show that deuterium passivation of the (3x3) is only reversible when exposed to atomic deuterium at a surface temperature of 700 K since tri- and dideuterides, necessary precursors for silicon etching, are not stable at this temperature. On the other hand, we show that the deuteration of the (R3xR3)R30° is always reversible because precursors to silicon etching are scarce on the surface [1]. Further, the comparison of the deuterium binding in the intercalation layer of quasi-free-standing graphene with the deuterated (R3xR3)R30° surface provides some indication on the bonding structure at the substrate intercalation layer [1,2].

[1] F.C. Bocquet et al. J. Phys. D: Appl. Phys. (2014) in press

[2] F.C. Bocquet et al. Phys. Rev. B. 85 (2012) 201401