Dresden 2014 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 104: Topological Insulators (organized by MA)
TT 104.4: Vortrag
Freitag, 4. April 2014, 10:15–10:30, HSZ 04
Surface and bulk contributions to the electronic structure of the topological insulator Sb2Te3(0001) — •Christoph Seibel1,2, Hendrik Bentmann1,2, Henriette Maaß1,2, Jürgen Braun3, Jan Minár3, Kenya Shimada4, and Friedrich Reinert1,2 — 1Experimentelle Physik VII, Universität Würzburg, D-97074 Würzburg — 2Gemeinschaftslabor für Nanoanalytik, Karlsruher Institut für Technologie KIT, D-76021 Karlsruhe — 3Department Chemie, Physikalische Chemie, Universität München, Butenandtstraße 5-13, D-81377 München — 4Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima 739-0046, Japan
Photon energy dependent angle-resolved photoemission measurements were performed to disentangle surface and bulk contributions to the electronic structure of the 3D topological insulator (TI) Sb2Te3. We discover a penetration of the topological surface state (TSS) into the bulk valence band regime where it coexists with bulk states without considerable hybridization. Our results indicate an emerging k⊥-dispersion of the TSS at higher binding energies, which we attribute to an increasing bulk character. These observations deviate from previous findings for the isostructural TIs Bi2Se3 and Bi2Te3. Our results are supported by fully relativistic one-step photoemission calculations.
Seibel et al. PRB 86, 161105(R) (2012)