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TT: Fachverband Tiefe Temperaturen

TT 107: Quantum Information Systems II (organized by HL)

TT 107.4: Vortrag

Freitag, 4. April 2014, 10:15–10:30, POT 151

Spin defect engineering in silicon carbide using neutron irradiation — •Franziska Fuchs¹, Michael Trupke², Georgy Astakhov¹, and Vladimir Dyakonov¹ — ¹Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — ²Vienna Center for Quantum Science and Technology, Atominstitut, TU Wien, A-1020 Wien

Atom-like defects in semiconductors are promising systems for spin-based quantum information applications. With its advanced growth and device technologies, Silicon carbide (SiC) is an eligible host for such defects, e.g. silicon vacancies (V_Si). This spin-3/2 system can be addressed and manipulated [1] and could serve as a room temperature source for single photons [2] or a room temperature maser amplifier [3]. With these applications in mind, one main challenge is to thoroughly create, isolate, and control the defects. Here, we report defect engineering of V_Si defects in SiC by means of neutron irradiation. Our photoluminescence measurements show that the defect density is well controllable via the irradiation dose. The irradiation flux has been varied over 10 orders of magnitude, from 10⁸ to 10¹⁸ neutrons/cm². Two specific cases are of interest. The generation of the maximum V_Si concentration possible without destroying the crystal structure is required for the implementation of maser amplifiers. On the other hand, the creation of very few, isolated defects is crucial for the realization of single photon sources. [1] Riedel et al.: Phys. Rev. Lett. 109, 226402 (2012), [2] Castelletto et al.: Nat Mat 12 (2013), DOI 10.1038/namt3806 [3] Kraus et al.: Nat Phys (2013), DOI 10.1038/nphys2826