Dresden 2014 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 108: Graphene (joint session with TT, MA, HL, DY, O)

TT 108.1: Talk

Friday, April 4, 2014, 11:30–11:45, CHE 89

Plasma-enhanced chemical vapor deposition of graphene on copper substrates — •Nicolas Wöhrl, Oliver Ochedowski, Steven Gottlieb, and Volker Buck — Universität Duisburg-Essen und CENIDE, 47057 Duisburg, Germany

In this work we present the synthesis of graphene on copper by microwave Plasma-enhanced Chemical Vapor Deposition (PE-CVD) process. The special construction of the plasma source allows the deposition at a wide range of different process parameters giving a fast and inexpensive method to synthesize graphene. Additional advantages of the plasma deposition of graphene are lower substrate temperatures compared with thermal CVD processes. The PE-CVD process uses hydrogen and methane as reaction gases exactly like thermal CVD process does. The gaseous precursors are decomposed in the plasma and the catalytic influence of copper and the minor solubility of carbon in copper lead to the growth of one monolayer of graphene. Plasma parameters are varied to investigate the influence on the graphene properties. Raman spectroscopy and AFM measurements are used as nondestructive tools for the characterization of the synthesized graphene films. Especially Raman spectroscopy is used as an efficient tool to determine the number of graphene layers, the disorder and the defect density. We present a possible way to produce large area of monolayer graphene on a copper based substrate. This technology can help to make graphene available for industrial applications.