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TT: Fachverband Tiefe Temperaturen
TT 108: Graphene (joint session with TT, MA, HL, DY, O)
TT 108.2: Vortrag
Freitag, 4. April 2014, 11:45–12:00, CHE 89
Continuous wafer-scale graphene on cubic-SiC(001) — •Victor Aristov1,2, Olga Molodtsova2, Alexei Zakharov3, Dmitry Marchenko4, Jaime Sánchez-Barriga4, Andrei Varykhalov4, Marc Portail5, Marcin Zielinski6, Igor Shvets7, and Alexander Chaika1,7 — 1ISSP RAS, Chernogolovka, Moscow dist. 142432, Russia — 2HASYLAB at DESY, D-22607 Hamburg, Germany — 3MAX-lab, Lund University, Box 118, 22100 Lund, Sweden — 4HZB für Materialien und Energie, D-12489 Berlin, Germany — 5CNRS-CRHEA, 06560 Valbonne, France — 6NOVASiC, BP267-F73375 Le Bourget du Lac Cedex, France — 7CRANN, School of Physics, Trinity College, Dublin 2, Ireland
The atomic and electronic structure of graphene synthesized on commercially available cubic SiC(001)/Si(001) wafers have been studied. LEED, LEEM, PEEM, STM and ARPES data prove the wafer-scale continuity and uniform thickness of the graphene overlayer and reveal that the graphene overlayer consists of only a few monolayers with physical properties of quasi-freestanding graphene: atomic-scale rippling, asymmetric distributions of carbon-carbon bond lengths etc. In addition, graphene overlayer consists of rotated nanometer-sized ribbons with four different lattice orientations connected through the grain boundaries. Thus, this graphene could be adapted for graphene-based electronic technologies and directly patterned using Si-electronic lithographic process. Supported by RFBR grant 14-02-00949, by Marie Curie IIF grant (7th ECFP) and by SPP 1459 of DPG.