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09:45 |
TT 13.1 |
InAs/GaSb compound quantum wells for electrically tunable topological insulator devices — •Georg Knebl, Matthias Dallner, Robert Weih, Sven Höfling, and Martin Kamp
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10:00 |
TT 13.2 |
The contribution has been withdrawn.
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10:00 |
TT 13.3 |
Temperature-dependent surface band gap of Dirac fermions observed at the (111) surface of the crystalline topological insulator Pb-Sn-Se — •Partha S. Mandal, Gunther Springholz, Günther Bauer, Valentine V. Volobuev, Andrei Varykhalov, Oliver Rader, and Jaime Sánchez-Barriga
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10:15 |
TT 13.4 |
Surface-Dominated Transport on a Bulk Topological Insulator — •Lisa Kühnemund, Lucas Barreto, Frederik Edler, Christoph Tegenkamp, Jianli Mi, Martin Bremholm, Bo Brummerstedt Iversen, Christian Frydendahl, Marco Bianchi, and Philip Hofmann
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10:30 |
TT 13.5 |
Room temperature high frequency transport of Dirac fermions in MBE grown Sb2Te3 based topological insulators — •T. Herrmann, P. Olbrich, S.N. Danilov, Ch. Weyrich, J. Kampmeier, G. Mussler, D. Grützmacher, L. Plucinski, C.M. Schneider, M. Eschbach, L.E. Golub, V.V. Bel’kov, and S.D. Ganichev
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10:45 |
TT 13.6 |
Topological Insulator Nanowires by Chemical Vapour Deposition — •Piet Schönherr and Thorsten Hesjedal
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11:00 |
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Coffee break (15 min.)
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11:15 |
TT 13.7 |
Optoelectronic flow trajectories in topological insulators — •Paul Seifert, Christoph Kastl, Tong Guan, Kehui Wu, X. Y. He, Yongqing Li, and Alexander W. Holleitner
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11:30 |
TT 13.8 |
Polarization-controlled picosecond spin currents in topological insulators — •Christoph Kastl, Christoph Karnetzky, Helmut Karl, and Alexander W. Holleitner
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11:45 |
TT 13.9 |
Scanning Tunneling Microscopy of Ultrathin Topological Insulator Sb2Te3 Films on Si(111) grown by Molecular Beam Epitaxy — •Martin Lanius, Jörn Kampmeier, Gregor Mussler, and Detlev Grützmacher
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12:00 |
TT 13.10 |
Transport of Dirac fermions in the presence of spin-orbit impurities — •Pierre Adroguer, Dimitri Culcer, and Ewelina Hankiewicz
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12:15 |
TT 13.11 |
Oscillatory surface dichroism of the insulating topological insulator Bi2Te2Se — •Susmita Basak, Madhab Neupane, Hsin Lin, N. Alidoust, S.-Y. Xu, Chang Liu, I. Belopolski, G. Bian, J. Xiong, H. Ji, S. Jia, S.-K. Mo, M. Bissen, M. Severson, N. P. Ong, T. Durakiewicz, R. J. Cava, A. Bansil, and M. Z. Hasan
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