Dresden 2014 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
TT: Fachverband Tiefe Temperaturen
TT 25: Focus Session: Electron Spin Qubits in Semiconductor Quantum Dots (organized by HL)
TT 25.6: Talk
Monday, March 31, 2014, 16:45–17:00, POT 051
Optical detection of coherent electron spin states of silicon vacancy defects in silicon carbide — •Matthias Widmann1, Sang-Yun Lee1, Nguyen Tien-Son2, Helmut Fedder1, Torsten Rendler1, Adam Gali3, Erik Janzén2, and Jörg Wrachtrup1,4 — 13. Physikalisches Institut, Universität Stuttgart — 2Department of Physics, Chemistry and Biology, Linköping University — 3Institute for Solid State Physics and Optics, Budapest — 4Max-Planck Institute for Solid State Research, Stuttgart
Deep defects in wide band gap materials are promising candidates for realizing quantum information processing [QIP]. One candidate is the negatively charged nitrogen-vacancy (NV) center in diamond. NV centers can be used for realization of QIP[1] and nano-scale magnetic field sensing[2]. The diamond serving as a host material, however, is rather hard to be implemented in existing silicon based semiconducting materials and devices. In order to circumvent this challenge, we focus on 4H silicon carbide (4H-SiC) which houses missing silicon atoms, forming the negatively charged silicon vacancies (TV centers). Unlike the visible light emissions from NV centers in diamond, TV centers in SiC also have the advantage of the infrared emissions around 900 nm, in which the optical attenuation is weaker in silica based fibers. We will present that single TV emissions can be observed and coherent spin manipulation of both ensemble and single TV centers are possible at room temperature.
[1] Neumann et al, Science, 2010, 329, 542
[2] J. R. Maze et al, Nature 455, 644-647