Dresden 2014 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 26: Quantum Wires: Transport Properties (organized by HL)

TT 26.5: Talk

Monday, March 31, 2014, 17:00–17:15, POT 006

Resistance profiling of freestanding GaAs nanowires by multitip STM — •Stefan Korte¹, Matthias Steidl², Hubertus Junker¹, Weihong Zhao², Werner Prost³, Vasily Cherepanov¹, Bert Voigtländer¹, Peter Kleinschmidt², and Thomas Hannappel² — ¹Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich, 52425 Jülich, Germany, and JARA-Fundamentals of Future Information Technology — ²Photovoltaics Group, Institute for Physics, Technische Universität Ilmenau, 98684 Ilmenau, Germany — ³CeNIDE and Center for Semiconductor Technology and Optoelectronics, University of Duisburg-Essen, 47057 Duisburg, Germany

Due to their specific one-dimensional geometry, III-V semiconductor nanowires are promising candidates for future optoelectronic devices. However, for the fabrication of novel high performance nanowire devices a precise control of doping profile is indispensable. We use a multitip STM as nanoprober to reveal the electrical transport properties of freestanding GaAs nanowires. p-doped GaAs nanowires are grown by Au-assisted metal-organic vapor-phase epitaxy (MOVPE) on GaAs(111)B and GaP(111)B substrates. Conductance profiles along the nanowires were obtained with four point probe measurements. Nanowires grown on different substrates, using a two temperature step growth mode or constant substrate temperature, all exhibit highly non-linear axial resistance profiles.