TT 26: Quantum Wires: Transport Properties (organized by HL)
Montag, 31. März 2014, 16:00–17:45, POT 006
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16:00 |
TT 26.1 |
Strongly interacting holes in Ge/Si core/shell nanowires — •Franziska Maier, Tobias Meng, and Daniel Loss
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16:15 |
TT 26.2 |
In-situ x-ray diffraction during MBE growth of InAs nanowires on Si — •Andreas Biermanns, Anton Davydok, Emmanouil Dimakis, Masamitu Takahasi, Takuo Sasaki, Lutz Geelhaar, and Ullrich Pietsch
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16:30 |
TT 26.3 |
Ga droplet templates: Density control of self-assisted GaAs nanowires — •Hanno Küpers, Faebian Bastiman, Claudio Somaschini, and Lutz Geelhaar
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16:45 |
TT 26.4 |
Transport measurements of ballistic quantum wires exposed to two magnetic spikes. — •Bernd Schüler, Mihai Cerchez, Hengyi Xu, Thomas Heinzel, and Andreas Wieck
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17:00 |
TT 26.5 |
Resistance profiling of freestanding GaAs nanowires by multitip STM — •Stefan Korte, Matthias Steidl, Hubertus Junker, Weihong Zhao, Werner Prost, Vasily Cherepanov, Bert Voigtländer, Peter Kleinschmidt, and Thomas Hannappel
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17:15 |
TT 26.6 |
Investigation of the electrical properties of freestanding Zn-doped GaAs nanowires by a multitip STM — •Matthias Steidl, Hubertus Junker, Weihong Zhao, Stefan Korte, Werner Prost, Vasily Cherepanov, Bert Voigtländer, Peter Kleinschmidt, and Thomas Hannappel
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17:30 |
TT 26.7 |
Investigation of top-gated InAs nanowires with HfO2 dielectric — •Marion Rosien, Torsten Rieger, Sebastian Heedt, Torsten Jörres, Thomas Schäpers, Detlev Grützmacher, and Mihail Ion Lepsa
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