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Dresden 2014 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 29: Graphene: Structural Properties (organized by O)

TT 29.1: Talk

Monday, March 31, 2014, 16:00–16:15, WIL C107

Vertical height of quasi-free standing monolayer graphene on SiC(0001): an XSW study — •J. Sforzini1, T. Denig2, T. L. Lee3, C. Kumpf1, S. Subach1, U. Starke2, F. C. Bocquet1, and F.S. Tautz11Peter Grünberg institute (PGI-3), Forschungszentrum Jülich, 52425 Jülich, Germany — 2Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany — 3Diamond light source ltd, Harwell oxford, Didcot, Oxfordshire, United Kingdom

We investigated a quasi-free standing monolayer graphene sample[1] on SiC(0001) obtained by decoupling the buffer-layer from Si-terminated surface by hydrogen intercalation. We used X-ray Standing Wave technique (XSW), combining dynamical diffraction and X-ray photoelectron spectroscopy, to detect the coherent distribution of the chemically different species (Si and C) at the interface. Our analysis shows two different carbon species (C in the graphene layer and C in the SiC bulk); we find that the adsorption height of the graphene layer is slightly higher than theoretically predicted. The discrepancy, attributed to the very weak graphene-substrate intercation, is still challenging for theory[2].

[1]Riedl, et. al., PRL, 103, 246804 (2009)

[2]Deretzis , et. al., Nanoscale, 5, 671-680 (2012)

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