Dresden 2014 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 29: Graphene: Structural Properties (organized by O)
TT 29.8: Talk
Monday, March 31, 2014, 17:45–18:00, WIL C107
Graphene nanolithography with 2.5 nm precision: combining bottom-up and top-down techniques — •Antonio J. Martínez-Galera1,2, Iván Brihuega1,3, Ángel Gutiérrez-Rubio1, Tobias Stauber1,3, and José M. Gómez-Rodríguez1,3 — 1Departamento Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain — 2Present address: II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, 50937 Köln, Germany. — 3Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049 Madrid, Spain.
The selective modification of pristine graphene represents an essential step to fully exploit its potential. The work presented here overcomes one of the remaining challenges key for the comprehensive integration of graphene in real devices: the realization of lithography below 10 nm sizes. Specifically, we have developed a perfectly reproducible nanolithographic technique for graphene that allows, by means of an STM tip, to modify with 2.5 nm accuracy the electronic properties of graphene monolayers epitaxially grown on Ir(111) surfaces. This method can be carried out also on micrometer sized regions and the structures so created are stable even at room temperature. As a result, we can strategically combine graphene regions presenting large differences in their electronic structure to design graphene nanostructures with tailored properties. Therefore, this novel nanolithography method could open the way to the design of nanometric graphene-based devices with specific functionalities. In particular, we explore here the possibility of developing a new platform for plasmonics.