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TT: Fachverband Tiefe Temperaturen

TT 30: Superconductivity - Poster Session

TT 30.63: Poster

Montag, 31. März 2014, 15:00–19:00, P2

Thin NbN film nanowires on GaAs for single-photon detectors — •Ekkehart Schmidt¹, Ulrich Rengstl², Elisabeth Koroknay², Konstantin Ilin¹, Michael Jetter², Peter Michler², and Michael Siegel¹ — ¹Institut für Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut für Technologie, Hertzstrasse 16, 76187 Karlsruhe, Germany — ²Institut für Halbleiteroptik und funktionelle Grenzflächen (IHFG), Universität Stuttgart , Allmandring 3, 70569 Stuttgart, Germany

For photonic integrated circuits, on chip emitters as well as detectors are needed to provide efficient data processing. Therefore fast and efficient detectors compatible with large scale integration along with sources, microcavities, waveguides and interferometers based on GaAs technology are required. Due to their single-photon resolution, fast detection, high detection efficiency and low dark count rate, the Superconducting Nanowire Single-Photon Detectors (SNSPDs) seem very promising. We studied transport and superconducting properties of 6 nm thick NbN films on GaAs suitable for SNSPD development. The NbN films were deposited using reactive magnetron sputtering on heated GaAs substrates. A Tc > 10 K of films has been achieved. SNSPDs were patterned using electron-beam lithography (EBL) and reactive-ion etching (RIE). The critical-current density of a 120 nm wide nanowire at 4.2 K exceeds 1.4 MA/cm^2. Results on study of optical response of NbN nanowire on GaAs will be presented and potentials of SNSPD integration into GaAs based photonic circuits will be discussed.