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TT: Fachverband Tiefe Temperaturen

TT 38: Transport: Spintronics and Magnetotransport (organized by TT)

TT 38.3: Vortrag

Dienstag, 1. April 2014, 10:00–10:15, BEY 81

Electrical tuning of spin-orbit interaction in InAs nanowires — •Zoltán Scherübl¹, Gergö Fülöp¹, Morten Hannibal Madsen², Samuel d'Hollosy³, Christian Schönenberger³, Jesper Nygård², and Szabolcs Csonka¹ — ¹Departement of Physics, Budapest University of Technology and Economic, Budapest, Hungary — ²Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark — ³Departement of Physics, University of Basel, Basel, Switzerland

InAs nanowires are a promising platform to fabricate various quantum electronic devices, for instance they have strong spin-orbit interaction (SOI). The controlled tuning of the SOI is needed in spin based qunatum devices, for example spintronic applications, spin qubits. In this study we investigated the possibility of tuning the SOI by electrostatic field. The sources of the electric field were two sidegates paralel to the wire axis. The strength of the SOI was analyzed by weak-antilocalization. We demonstrated that the SOI can be strongly tuned, by a factor of 3 with the electric field across the nanowire, while the average electron density in the nanowire was kept constant.