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TT: Fachverband Tiefe Temperaturen

TT 48: Transport: Topological Insulators I (organized by TT)

TT 48.1: Vortrag

Dienstag, 1. April 2014, 14:00–14:15, HSZ 304

All in-ultra-high-vacuum study of thin film topological insulators: Bi₂Te₃ — •Katharina Hoefer, Diana Rata, Christoph Becker, and Liu Hao Tjeng — Max Planck Institute for Chemical Physics of Solids

Thin films of topological insulators offer the possibility for the experimental study of the expected spectacular phenomena occurring at the surface or interface with these materials due to the increased surface to bulk ratio in comparison to bulk crystals. Bulk materials are always defective which leads to extra contributions in conductance.

To protect the surface integrity an all in- ultra-high-vacuum study is crucial. High quality thin films of Bi₂Te₃ were grown on well lattice matched BaF₂(111) substrates using Molecular Beam Epitaxy. The preparation, characterization by RHEED, LEED, XPS and ARPES and especially transport measurements, were performed all in-situ under ultra-high-vacuum conditions.

Results of this study and the effect of air exposure on the electronic structure and transport properties will be presented.