Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
TT: Fachverband Tiefe Temperaturen
TT 48: Transport: Topological Insulators I (organized by TT)
TT 48.8: Vortrag
Dienstag, 1. April 2014, 15:45–16:00, HSZ 304
PN junctions of Topological Insulators — •Sourin Das1 and Disha Wadhawan2 — 1MPIPKS, Dresden, Germany & University of Delhi, India — 2University of Delhi, India
Spin textures of surface states of topological insulators (TI) open up possibilities for designing ultra fast electrically controllable spin transistor. In this context I will discuss spin-valve effect associated with a gating induced PN junction designed on the surface state of 2D and 3D TI. I will show that *conduction to conduction* and *conduction to valence* band transport in a PN junction is topologically distinct resulting in asymmetric electrical transport. The topological distinction is shown to be quantifiable in term of the Pancharatnam geometric phase.