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TT: Fachverband Tiefe Temperaturen

TT 62: Spintronics I (organized by HL)

TT 62.1: Vortrag

Mittwoch, 2. April 2014, 10:15–10:30, POT 006

Spin dynamics on the metallic side of the metal to insulator transition — •Jan G. Lonnemann, Kim Niewerth, Jens Hübner, and Michael Oestreich — Leibniz Universität Hannover - Abteilung Nanostrukturen, Hannover, Germany

Several theoretical works treat the spin dynamics in zinc-blende semiconductors, like GaAs, around the metal-to-insulator transition. Most of them fail to explain the extremely long lifetimes experimentally observed [1]. Recently, it was argued that the Dyakonov-Perel mechanism (DP), usually only applicable in the conduction band, can be extended towards hopping transport (HT) present in the impurity band [2]. The theoretical calculations predict a dependence on the carrier density differing strongly from the DP spin relaxation expected for the conduction band electrons. We present extremely low excitation Hanle depolarization measurements on precisely n-doped MBE grown samples in the range of carrier concentrations from 2 to 10*10¹⁶ cm⁻³. The density dependence of the spin lifetimes extracted from our measurements indicates that the dephasing due to HT is not the dominant mechanism. Remarkably, there is no significant difference in the spin lifetimes obtained from measurements on MBE material, with extremely low compensation ratios, as compared with samples from commercial wafers. This further indicates that dephasing due to HT is not the dominant mechanism, since HT depends strongly on the compensation ratio.

[1] M. Römer et al.; Phys. Rev. B, 81, 075216 (2010).

[2] G.A. Intronati et al.; Phys. Rev. Lett., 108, 016601 (2012).