Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

TT: Fachverband Tiefe Temperaturen

TT 64: Quantum Dots: Optical Properties I (organized by HL)

TT 64.1: Vortrag

Mittwoch, 2. April 2014, 09:30–09:45, POT 251

Single line emission of InGaN quantum dots grown on AlGaN templates — •Elahe Zakizadeh, Carsten Laurus, Stephan Figge, Timo Aschenbrenner, Kathrin Sebald, Jürgen Gutowski, and Detlef Hommel — Institute of Solid State Physics, University of Bremen, Germany

InGaN quantum dots (QDs) are a good candidates for realizing single-photon emission in the blue to green spectral region at elevated temperatures, because of the large bandgap and high exciton binding energies of the nitrides. Up to now, temperature dependent measurements demonstrate thermal stability up to 150 K of the emission of a single InGaN quantum dot grown on GaN template.

In order to achieve single-line emission at even higher temperatures, an enhancement of the carrier confinement in the quantum dots is needed. This can be realized by growing InGaN quantum dots on AlGaN templates by metal organic vaper phase epitaxy.

In this contribution we present the optical properties of single InGaN quantum dots achieved by the micro-photoluminescence measurements. The thermal stability of the emission lines and their dependance on the excitation density will be discussed.