Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
TT: Fachverband Tiefe Temperaturen
TT 73: Transport: Carbon Nanotubes (organized by TT)
TT 73.3: Vortrag
Mittwoch, 2. April 2014, 17:00–17:15, HSZ 304
Large scale ab initio study of extended metal-CNT contacts
— •Artem Fediai1,2,3, Dmitry Ryndyk1,2,3, and Gianaurelio Cuniberti1,2,3 — 1Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, Germany — 2Center for Advancing Electronics Dresden, TU Dresden, Germany — 3Dresden Center for Computational Materials Science, TU Dresden, Germany
In experimental samples of carbon nanotube transistors (CNT-FETs) the electrical contact and current inflow occur along relatively long portion of a CNT embedded into a metal. Only very few theoretical studies were done with geometries and materials close to realistic ones. The most common simplified approaches are using the models of point-like or very slightly embedded contacts.We perform large-scale modeling of extended metal-CNT contacts by density functional theory accompanied by Green function method in order to elucidate electrical properties of realistic metal-CNT contacts. We have obtained smooth shrinking of the band gap inside embedded portion of a semiconductor nanotube and induced by the metal doping of the embedded and free-standing part of a CNT. It causes geometry and material dependent behavior of the transmission coefficient and density of states along a CNT. We also analyze the electrostatic potential and charge redistribution and formulate an ab initio based effective transport model to calculate the current-voltage characteristics of large scale CNT-FETs.