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Dresden 2014 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 81: Superconductivity: Properties and Electronic Structure

TT 81.1: Talk

Thursday, April 3, 2014, 09:30–09:45, HSZ 201

Growth of superconducting LaPd1xBi2 thin films by molecular beam epitaxy — •Reiner Retzlaff, Niklas van Elten, Jose Kurian, and Lambert Alff — Institute of Materials Science, TU Darmstadt, Germany

We have grown thin films of LaPdBi2 by reactive molecular beam epitaxy on single crystal MgO substrates. Films were grown in a custom designed UHV chamber by the simultaneous evaporation of high purity La, Pd and Bi metals by e-beam evaporaters with in situ rate control. Single phase LaPdBi2 films are stable in a small window of growth temperature. The films were characterised by RHEED, X-ray diffraction and electrical transport measurements. LaPdBi2 films were epitaxial and c-axis oriented as evident from RHEED and XRD analysis. The Pd deficient LaPdBi2 thin films showed superconductivity with a superconducting transition of about 3 K. To best of our knowledge this is the first report of the synthesis and superconductivity of LaPdBi2.

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