Dresden 2014 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
TT: Fachverband Tiefe Temperaturen
TT 89: Graphene-Like Materials: Silicene, MoS2 and Relatives (organized by HL)
TT 89.2: Talk
Thursday, April 3, 2014, 10:15–10:30, POT 081
Single and Multi-Layer Silicene: Growth, Properties and Perspectives — •Patrick Vogt1, Thomas Bruhn1, Andrea Resta2, Paola De Padova3, and Guy Le Lay2 — 1Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany — 2Aix-Marseille University, CNRS- PIIM UMR 7345, F-13397 Marseille Cedex 20, France — 3Instituto di Struttura della Materia, Consiglio Nazionale delle Ricerche -ISM, via Fosso del Cavaliere, 00133 Roma, Italy
Silicene, a new silicon allotrope with a graphene-like honeycomb structure, has recently attracted considerable interest, because its topology confers to it the same remarkable electronic properties as those of graphene, with the potential advantage of being easily integrated in current Si-based nano/micro-electronics offering novel technological applications.
We will discuss the epitaxial formation of single layer silicene on Ag substrates and its structural and electronic properties [1-2]. Based on these results we will look at the growth of silicene multi-layers which can be explained by stacking of single silicene sheets [3-4]. Different experimental techniques are used to investigate atomic structure and electronic properties of this layered system and to discuss its similarities to graphite.
1) Vogt, P. et al., Phys. Rev. Lett. 108, 155501 (2012).
2) Avila, J. et al., J. Phys.: Condens. Matter 25, 262001 (2013).
3) De Padova, P.; Vogt, et al. Appl. Phys. Lett. 102, 163106 (2013).
4) Resta, A. et al., Sci. Rep. 3, 2399 (2013).