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TT: Fachverband Tiefe Temperaturen

TT 89: Graphene-Like Materials: Silicene, MoS₂ and Relatives (organized by HL)

TT 89.5: Vortrag

Donnerstag, 3. April 2014, 11:15–11:30, POT 081

Photocurrent studies on semiconducting MoS2 — Marina Hoheneder, •Eric Parzinger, Alexander Holleitner, and Ursula Wurstbauer — Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4a, 85748 Garching

The current interest in transition metal dichalcogenides is stimulated by their peculiar electrical and optoelectrical properties and their potential for novel device applications. We investigate the semiconductor MoS2, which shows a crossover from an indirect to a direct bandgap semiconductor by thinning it down to a monolayer. We prepare MoS2 samples through micromechanical exfoliation and characterize the thin flakes with Raman spectroscopy. We further study photocurrent generation of single and few layer MoS2 in dependence of wavelength and power of the exciting light. We gratefully acknowledge financial support by BaCaTec.