Dresden 2014 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 90: Spintronics II (organized by HL)
TT 90.1: Talk
Thursday, April 3, 2014, 10:00–10:15, POT 151
Magnetotransport in nanostructured InAs-based Heterostructures — •Olivio Chiatti1, Sven S. Buchholz1, Wolfgang Hansen2, Mehdi Pakmehr3, Bruce D. McCombe3, and Saskia F. Fischer1 — 1Neue Materialien, Institut für Physik, Humboldt-Universität zu Berlin, D-10099 Berlin — 2FG Wachstum, Institut für Angewandte Physik, Universität Hamburg, D-20148 Hamburg — 3Dept. of Physics, University at Buffalo, the State University of New York, Buffalo, NY 14260-1500 USA
The control of spin-polarized currents entirely by electrical fields is of great interest in the field of spintronics. The spin-orbit coupling in narrow-gap semiconductors has been identified as a possible tool to this end, because it couples the momentum of an electron to its spin. Nanostructures can be used to filter specific momentum modes and offer the possibility to create and detect spin-polarized currents. [1] Quantum point contacts (QPCs) in nominally symmetric InAs quantum well structures have been reported to generate spin-polarized currents, when asymmetric gate voltages are applied. [2]
We have fabricated Hall-bars and QPCs with in-plane gates in InAs quantum well structures, and performed transport measurements at low temperatures and in high magnetic fields. We investigate the effects of symmetric and asymmetric gate voltages. Here, we present the results of our measurements and discuss their implications for investigations of the spin-orbit coupling in InAs.
[1] Silsbee, J. Phys.: Condens. Matter 16, R179 (2004)
[2] Debray et al., Nature Nanotech. 4, 759 (2009)