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TT: Fachverband Tiefe Temperaturen

TT 90: Spintronics II (organized by HL)

TT 90.5: Vortrag

Donnerstag, 3. April 2014, 11:00–11:15, POT 151

Direct measurement of the spin splitting in GaAs quantum wells — •Christoph Schönhuber¹, Matthias Walser², Christian Reichl³, Werner Wegscheider³, Gian Salis², Tobias Korn¹, and Christian Schüller¹ — ¹Universität Regensburg, 93040 Regensburg, Germany — ²IBM Research-Zurich, 8803 Rüschlikon, Switzerland — ³ETH Zurich, 8093 Zurich, Switzerland

We investigate the spin splitting in the conduction band of GaAs quantum wells employing Raman scattering experiments. The investigated system consists of a 12-nm-wide (001)-oriented GaAs/AlGaAs QW, which is asymmetrically Si modulation doped to reach a balanced Rashba and Dresselhaus SOI contribution.

The performed measurements on intrasubband transitions reveal a double peak structure for the [11] direction, while in [1-1] direction there is only a single peak. This anisotropic behavior in the spin splitting is probed for a wide range of transfered wavevectors and in good agreement with the prediction for a system with comparable magnitudes of Rashba and Dresselhaus SOI.