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Dresden 2014 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 94: Low-Dimensional Systems: Oxide Hetero-Interfaces

TT 94.2: Talk

Thursday, April 3, 2014, 15:15–15:30, HSZ 204

Direct k-space mapping of interface states in oxide-oxide heterostructures — •Florian Pfaff1, Hidenori Fujiwara2, Judith Gabel1, Götz Berner1, Atsushi Yamasaki3, Akira Sekiyama2, Yunzhong Chen4, Nini Pryds4, Shigemasa Suga5, 6, Michael Sing1, and Ralph Claessen11Physikalisches Institut and Röntgen Center for Complex Materials Systems (RCCM), Universität Würzburg — 2Graduate School of Engineering Science, Osaka University — 3Department of Physics, Konan University — 4Department of Energy Conversion and Storage, Technical University of Denmark, — 5Institute of Scientific & Industrial Research, Osaka University — 6Max-Planck-Institute for Microstructure Physics, Halle

The most prominent example of unexpected quantum phases that can form at oxide heterointerfaces is the 2D electron system (2DES) in LaAlO3/SrTiO3 (LAO/STO). Its origin has been related to electronic reconstruction due to the polar character of the LAO. The novel γ-Al2O3 (GAO)/STO also exhibits a 2DES with even higher mobility although GAO is regarded to be non-polar. Here, it is assumed that O vacancies at the STO side of the interface induce the 2DES. We have mapped the momentum-resolved electronic structure of the interface Ti 3d states by resonant soft x-ray photoemission for both types of heterostructures. While one can observe in both systems a dichotomy of mobile and trapped interface charges they also show remarkable differences regarding the proportion of mobile and trapped carriers as well as the electron dispersions and Fermi surfaces.

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