Mainz 2014 – scientific programme

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T: Fachverband Teilchenphysik

T 115: Halbleiter 7

T 115.1: Talk

Thursday, March 27, 2014, 16:45–17:00, P109a

Characterisation of HV-CMOS sensors for the ATLAS upgrade — •Branislav Ristic — CERN, Geneva, Switzerland — Université de Genève, Geneva, Switzerland

In view of the upcoming upgrade of the ATLAS Tracker towards the HL-LHC a new approach for silicon sensors is evaluated. High Voltage CMOS processes are good candidates for cost-effective, thin and radiation hard detectors with active electronics implemented directly on the sensor. While fully monolithic (MAPS) sensors are in principle feasible, they are very challenging to built with low noise values due to the digital crosstalk generated throughout the pixel matrix. Therefore, a hybrid detector approach is envisaged where amplifiers and discriminators accompanied by necessary DACs are implemented on the sensor, leaving digital processing to the current ATLAS Pixel readout chip FE-I4. In contrast to passive sensors, the amplified signals allow for AC coupling to the readout chip, replacing the costly and difficult bump-bonding process by gluing.

Test chips have been produced in the AMS H18 180nm HV-CMOS process adapted to the FE-I4 readout pitch. The technology and characterization results of test chips will be presented.