Mainz 2014 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 115: Halbleiter 7
T 115.2: Vortrag
Donnerstag, 27. März 2014, 17:00–17:15, P109a
Development of Monolithic pixel Detectors for High Radiation Environments — •Tomasz Hemperek1, Tetsuichi Kishishita1, Hans Krüger1, Yunan Fu1, Norbert Wermes1, and Miroslav Havranek2 — 1Institute of Physics, University of Bonn, Bonn, Germany — 2Institute of Physics, Academy of Sciences of the Czech Republic, Prague, Czech Republic
The ultimate silicon detector for particles would be single chip (monolithic) solution where detection and signal processing is integrated on a single silicon die with high radiation tolerance. This would allow significant reduction of cost and system complexity especially critical for future large area detectors. Recent developments in the field of silicon imaging opened new possibilities in that area. The concept of depleted Monolithic Active Pixel Sensors and possible implementations that could bring this idea to reality for high radiation dose environments and first prototype device measurements will be presented.