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T: Fachverband Teilchenphysik

T 17: Halbleiter 1

T 17.5: Vortrag

Montag, 24. März 2014, 12:00–12:15, P105

Radiation Hardness and Quality Control of the AGIPD Silicon Pixel Sensors — •Ioannis Kopsalis¹, Eckhart Fretwurst¹, Robert Klanner¹, Joern Schwandt¹, and Jiaguo Zhang² — ¹Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg, Germany — ²Deutsches Elektronen-Synchrotron, Notkestraße 85, D-22607 Hamburg, Germany

Experiments at the European X-ray Free-Electron Laser (EuXFEL) require pixel sensors with very challenging specifications: the ability to distinguish zero from one X-ray photon for energies between 5 and 20 keV, up to 10⁵ photons in pulses of less than 50 fs duration and 220 ns separation, and a total X-ray dose of up to 1 GGy for three years of operation. AGIPD (Adaptive Gain Integrating Pixel Detector) is a hybrid pixel-detector system to meet these challenges.

Based on extensive TCAD simulations which take into account the effects of X-ray radiation damage the AGIPD sensor has been designed and produced in industry. Measurements on test structures and on mini-sensors irradiated up to 10 MGy show, that the AGIPD specifications, in particular a breakdown voltage above 500 V for high X-ray doses, have been achieved. The talk presents the design of the AGIPD sensor, the measurements of the relevant radiation damage parameters, and the results of the sensor acceptance measurements.