Berlin 2015 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 13: Ceramics and Applications (DF with KR)
DF 13.1: Hauptvortrag
Mittwoch, 18. März 2015, 11:20–11:50, EB 407
Twisting the anionic-electronic transport kinetics to trigger memristance for resistive switching non-volatile memories: new materials, structering and methods — •Jennifer Rupp, Felix Messerschmitt, Sebastian Schweiger, Rafael Schmitt, and Markus Kubicek — ETH Zürich, Elektrochemische Materialien
Resistive switches are a new class of non-volatile memories which switch between low- and high-resistance values by application of voltage pulses. Despite their promises oxide-based resistive switches are rarely connected in their oxide diffusion kinetics to the memristive device performance under bias. Models to describe the mixed anionic-electronic defect contributions for two-carrier systems are missing. We review methods to probe carrier diffusion and memristance for mixed anionic-electronic resistive switches. Secondly, we use chronoamperometry to analyze via the Memristor-based Cottrell analysis diffusion constants and kinetics for mixed anionic-electronic Pt|SrTiO3-δ|Pt switches. Thirdly, material engineering of oxides is discussed to control device properties like retention, Ron/Roff ratios and power consumption by "interfacial strain engineering of mixed conducting oxide". Both examples implicate new material design and selection routes to tune the anionic-electronic transport in resistive switches by either knowledge on their diffusion kinetics and novel analyses or new interfacial strain engineering routes to alter electro-chemo-mechanics and transport.