Berlin 2015 – scientific programme
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DF: Fachverband Dielektrische Festkörper
DF 13: Ceramics and Applications (DF with KR)
DF 13.2: Talk
Wednesday, March 18, 2015, 11:50–12:10, EB 407
Effects of heavy-ion irradiation in crystals studied by SAXS/SANS — •Daniel Schauries1, Maik Lang2, Christina Trautmann3, and Patrick Kluth1 — 1Australian National University, Canberra — 2University of Tennessee, Knoxville, USA — 3GSI Darmstadt, Germany
Insulators and semiconductors exposed to swift heavy ions can form ion tracks as a result of the ion-electron interaction. These tracks are narrow, cylindrical-shaped amorphous regions embedded within the crystalline host matrix. In materials engineering they are utilized to modify (opto-)electronic properties, create nanowires and membranes as well as nuclear detectors. Typically, ion tracks are enlarged via chemical etching to make them accessible to microscopy.
Here, we present an experimental investigation into the formation and recovery mechanisms of un-etched tracks. Tracks were created at the high-energy heavy ion accelerator at GSI Darmstadt. Small angle x-ray and neutron scattering (SAXS/SANS) at the Australian Synchrotron and Oak Ridge National Lab [1] was used to investigate parameters such as temperature and pressure on the track size. Elevated temperatures during track formation yielded larger tracks, due to a reduction of the necessary melting energy. For existing tracks however, higher temperatures increases their recovery rate and makes the damaged lattice recrystallizing faster [2].
Work supported by the Australian Research Council and US-DOE. [1] P. Kluth et al., Phys. Rev. Lett. 101 (2008) 175503.
[2] D. Schauries et al., J. Appl. Cryst 46 (2013) 155.