Berlin 2015 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 16: Focused Session on GHz Dielectrics: Materials for Mobile Communication I (DF with HL/MM)
DF 16.7: Vortrag
Donnerstag, 19. März 2015, 12:10–12:30, EB 407
Highly conducting SrMoO3 thin films for microwave applications — •Aldin Radetinac1, Arzhang Mani1, Sergiy Melnyk2, Mohammad Nikfalazar2, Jürgen Ziegler1, Yuliang Zheng2, Rolf Jakoby2, Lambert Alff1, and Philipp Komissinskiy1 — 1Institute for Materials Science, TU Darmstadt, Germany — 2Institute for Microwave Engineering and Photonics, TU Darmstadt, Germany
We have measured the microwave resistance of highly conducting perovskite oxide SrMoO3 thin film coplanar waveguides. The epitaxial SrMoO3 thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3 nm. Layer-by-layer growth could be achieved for film thicknesses up to 400 nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29 µ Ωcm between 0.1 and 20 GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO3 is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices.
This work was supported by the DFG project KO 4093/1-1.
[1] A. Radetinac, A. Mani, S. Melnyk, M. Nikfalazar, J. Ziegler, Y. Zheng, R. Jakoby, L. Alff, and P. Komissinskiy, Appl. Phys. Lett. 105, 114108 (2014)