Berlin 2015 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 6: Poster Session DF
DF 6.4: Poster
Montag, 16. März 2015, 19:00–21:00, Poster C
AC eletrical measurement on amorphous phase change materials — •Chao Chen1, Volker Hanno1, Peter Jost1, and Wuttig Matthias1,2 — 1I. Institute of Physics (IA) of the RWTH Aachen, Germany — 2JARA-FIT, RWTH Aachen, Germany
Phase-change materials (PCMs) have already been employed in rewritable optical data storage (eg. Blue-ray disc). In the near future, PCM-based electrical memories, phase-change random access memories (PCRAM), could become a competitor for both Flash and DRAM [1,2]. Therefore it is necessary to understand the electronic transport properties of phase change materials for electrical storage.
There is a tremendous difference between crystalline and amorphous PCMs in terms of optical and electrical properties, which is attributed to the presence of resonant bonding in crystalline PCMs [3]. The crystal structure and electrical properties of crystalline PCMs have already been intensively studied. However, the phenomena of resistance drift and threshold switching in amorphous PCMs are not yet well understood. Here we present AC conductivity and impedance spectroscopy data which have been measured in order to investigate the electrical and dielectric properties of the amorphous phase. We expect these data to provide valuable insight into the structural and bonding properties which are supposed to be responsible for the aforementioned phenomena.