Berlin 2015 – scientific programme

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DS: Fachverband Dünne Schichten

DS 10: Thermoelectric materials

DS 10.4: Talk

Tuesday, March 17, 2015, 10:15–10:30, H 0111

Nanostructured SiGe thin films obtained through MIC processing — •Marc Lindorf¹, Hartmut Rohrmann², and Manfred Albrecht¹ — ¹University of Augsburg, Universitätsstraße 1, 86159 Augsburg, Germany — ²Oerlikon Advanced Technologies AG, Iramali 18, 9496 Balzers, Liechtenstein

In times of growing energy consumption thermoelectric devices pose an opportunity for energy harvesting. However commercially available thermoelectric materials show a deficit in efficiency governed by low ZT values. New approaches like nanostructuring [1] try to increase the efficiency, but often lack industrial applicability due to high cost and low production speed. This work presents results on sputter deposited multilayer stacks of Si₈₀Ge₂₀(10 nm)/[Al(d_Al)/Si₈₀Ge₂₀(10 nm)]₅₀/SiO₂(200 nm)/Si. Crystallization and Al dopant activation is achieved by post-annealing through metal induced crystallization (MIC) [2]. This approach allows grain size control via annealing temperature and Al interlayer thickness d_Al in the nanometer regime. Results will be presented regarding structural and thermoelectric properties.

[1] Y. Lan et al.,Adv. Funct. Mater. 20, 357-376 (2010).

[2] Z. M. Wang et al.,Phys. Rev. Lett. 100, 125503 (2008)