Berlin 2015 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 15: High-k and Low-k Dielectrics (joint session with DF)
DS 15.3: Vortrag
Dienstag, 17. März 2015, 11:45–12:00, H 0111
k-restore Process with Plasma Enhanced Fragmentation for Damaged ULK Materials — A DFT and MD Study — •Anja Förster1,5, Christian Wagner2, Jörg Schuster1, Sibylle Gemming3,4, and Stefan Schulz1,2 — 1Fraunhofer ENAS, Chemnitz — 2Center for Microtechnologies, TU Chemnitz, Chemnitz — 3Institute of Physics, TU Chemnitz, Chemnitz — 4Helmholtz-Zentrum Dresden-Rossendorf, Dresden — 5cfaed, TU Dresden, Dresden
Because of their low dielectric constant (k-value) ultra-low-k (ULK) materials are used for isolating the interconnects in integrated circuits. However, during the manufacturing process the k-value lowering methyl groups are replaced by hydroxyl groups and hydrogen atoms. This process is called OH- and H-damage.
In our simulation study we use fragmented silyation molecules (OMCTS, DMADMS) to repair the OH-and H-damages and restore the k-value of the ULK material by reinserting lost methyl groups. The fragmentation of DMADMS and OMCTS is investigated as a function of the reaction temperature using DFT on the PBE/DNP-level.
The repair behavior of the so obtained fragments are studied with two model systems: an assortment of small ULK-fragments and a silica cluster. We show that larger repair fragments with two and three methyl groups are energetically favorable.