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DS: Fachverband Dünne Schichten
DS 16: Atomic Layer Deposition
DS 16.2: Talk
Tuesday, March 17, 2015, 12:30–12:45, H 0111
Atomic Layer Deposition and characterization of Ga-doped Sb2Te3 thin films at low temperatures. — •Christoph Wiegand1, Monika Rusek2, Johannes Gooth1, Robert Zierold1, Stephan Schulz2, and Kornelius Nielsch1 — 1Institut für Nanostruktur- und Festkörperphysik, Universität Hamburg — 2Institut für Anorganische Chemie, Universität Duisburg-Essen
Semiconductors of the V2VI3-type have recently become in the focus of a new type of material class, called topological insulators (TIs). TIs are bulk insulators that offer time-reversal symmetry protected highly conductive surface states.
We demonstrate the growth of antimony telluride and gallium telluride thin films via ALD at temperatures below 100 ∘C, which is relatively low compared to CVD or comparable techniques. In supercycle approach depicted GaxSb2−xTe3 compounds and nanolaminates have been synthesized and have led to an understanding of the crystallization behavior of Sb2Te3 in dependence of the Ga-content and the underlying substrate. We were able to determine the minimum Ga-content needed for single-crystalline growth of GaxSb2−xTe3 thin films. Moreover, actual studies are performed on the measurement of the electrical transport properties of these GaxSb2−xTe3 films using a micron-sized hall-bar device fabricated by standard photolithography and lift-off processing.
The authors acknowledge financial support from the DFG through the SPP 1666 project "Topological Insulators".