Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 16: Atomic Layer Deposition

DS 16.2: Vortrag

Dienstag, 17. März 2015, 12:30–12:45, H 0111

Atomic Layer Deposition and characterization of Ga-doped Sb₂Te₃ thin films at low temperatures. — •Christoph Wiegand¹, Monika Rusek², Johannes Gooth¹, Robert Zierold¹, Stephan Schulz², and Kornelius Nielsch¹ — ¹Institut für Nanostruktur- und Festkörperphysik, Universität Hamburg — ²Institut für Anorganische Chemie, Universität Duisburg-Essen

Semiconductors of the V₂VI₃-type have recently become in the focus of a new type of material class, called topological insulators (TIs). TIs are bulk insulators that offer time-reversal symmetry protected highly conductive surface states.

We demonstrate the growth of antimony telluride and gallium telluride thin films via ALD at temperatures below 100 ^∘C, which is relatively low compared to CVD or comparable techniques. In supercycle approach depicted Ga_xSb_2−xTe₃ compounds and nanolaminates have been synthesized and have led to an understanding of the crystallization behavior of Sb₂Te₃ in dependence of the Ga-content and the underlying substrate. We were able to determine the minimum Ga-content needed for single-crystalline growth of Ga_xSb_2−xTe₃ thin films. Moreover, actual studies are performed on the measurement of the electrical transport properties of these Ga_xSb_2−xTe₃ films using a micron-sized hall-bar device fabricated by standard photolithography and lift-off processing.

The authors acknowledge financial support from the DFG through the SPP 1666 project "Topological Insulators".